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1

Lattice-mismatch effects on properties in ZnSe layer grown on GaAs substrate by low pressure OMVPE

Shigeo Fujita, Tokuo Yodo, Akio Sasaki

Journal:

Journal of Crystal Growth

Année:

1985

Langue:

english

Fichier:

PDF, 287 KB

english, 1985

2

Growth of ZnSe single crystals by iodine transport

Tadashi Koyama, Tokuo Yodo, Hidetoshi Oka, Ken Yamashita, Tetsuya Yamasaki

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 898 KB

english, 1988

3

Thermal stability of ZnSe epilayer grown by MOVPE

Tokuo Yodo, Ken Yamashita

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 556 KB

english, 1988

4

Thermal stability of ZnSe homo- and heteroepitaxial layers grown at low temperatures by atmospheric pressure MOVPE

Yodo, Tokuo, Ueda, Kazuhiro, Yamashita, Ken

Journal:

Journal of Crystal Growth

Année:

1990

Langue:

english

Fichier:

PDF, 321 KB

english, 1990

5

p-type doping by ion implantation into ZnSe epitaxial layers grown by metalorganic vapor phase epitaxy

Tokuo Yodo, Kazuhiro Ueda, Ken Yamashita

Journal:

Journal of Crystal Growth

Année:

1990

Langue:

english

Fichier:

PDF, 358 KB

english, 1990

6

Li+ ion implantation into ZnS epitaxial layers grown by metalorganic vapor phase epitaxy

Tokuo Yodo, Shuhei Tanaka

Journal:

Journal of Crystal Growth

Année:

1992

Langue:

english

Fichier:

PDF, 361 KB

english, 1992

7

Effects of ultraviolet irradiation during growth of ZnSe epilayers by atmospheric pressure metalorganic vapor-phase epitaxy using dimethyl zinc and H2Se

Adrienne C. Alton, Tokuo Yodo

Journal:

Journal of Crystal Growth

Année:

1993

Langue:

english

Fichier:

PDF, 488 KB

english, 1993

8

Initial growth of GaAs on Si(111) substrates by molecular beam epitaxy

Tokuo Yodo, Masao Tamura

Journal:

Journal of Crystal Growth

Année:

1995

Langue:

english

Fichier:

PDF, 477 KB

english, 1995

9

Visible emissions near 1.9–2.2 eV from hexagonal InN films grown by electron cyclotron resonance plasma-assisted molecular-beam epitaxy

Tokuo Yodo, Yasunobu Kitayama, Kazunari Miyaki, Hiroaki Yona, Yoshiyuki Harada, Kathryn E Prince, K Scott, A Butcher

Journal:

Journal of Crystal Growth

Année:

2004

Langue:

english

Fichier:

PDF, 552 KB

english, 2004

10

Effects of nitrogen plasma irradiation during the growth process after buffer layer growth on the characteristics of hexagonal InN films grown on Si (1 1 1) by electron–cyclotron resonance plasma-assisted molecular-beam epitaxy

Tokuo Yodo, Teruya Shimada, Sumito Tagawa, Yoshiyuki Harada

Journal:

Journal of Crystal Growth

Année:

2007

Langue:

english

Fichier:

PDF, 178 KB

english, 2007

11

Mutual influence among inert nitrogen molecules, nitrogen radical atoms, nitrogen radical molecules and nitrogen molecular ions on growth process and crystal structure of GaN heteroepitaxial layers grown on Si(0 0 1) and Si(1 1 1) substrates by molecular-beam epitaxy assisted by electron cyclotron resonance

Tokuo Yodo, Hironori Ando, Daiki Nosei, Jyunya Seko, Kentarou Sakai, Masakazu Shimeno, Yoshiyuki Harada

Journal:

Journal of Crystal Growth

Année:

2001

Langue:

english

Fichier:

PDF, 296 KB

english, 2001

12

Molecular beam epitaxial growth of the CdMnTeCdTe superlattices on (100) GaAs substrates

Mitsuaki Yano, Kazuto Koike, Takeshi Furushou, Tokuo Yodo

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 488 KB

english, 1997

13

Influences of off-angle and off-direction of substrate on crystalline quality of GaAs and Ge heteroepitaxial films grown on vicinal Si(1 1 0) substrates by molecular-beam epitaxy

Tokuo Yodo, Masaaki Toyama, Yasuyuki Imai, Hideki Shirasawa

Journal:

Journal of Crystal Growth

Année:

2000

Langue:

english

Fichier:

PDF, 355 KB

english, 2000

14

Reactor pressure dependence of properties of undoped ZnSe grown by low-pressure omvpe

Shigeo Fujita, Tokuo Yodo, Yoshinobu Matsuda, Akio Sasaki

Journal:

Journal of Crystal Growth

Année:

1985

Langue:

english

Fichier:

PDF, 402 KB

english, 1985

15

Crystallographic properties of ZnSe grown by sublimation method

Tadashi Koyama, Tokuo Yodo, Ken Yamashita

Journal:

Journal of Crystal Growth

Année:

1989

Langue:

english

Fichier:

PDF, 459 KB

english, 1989

16

High quality over-epilayer growth of ZnSe on Li+-implanted ZnSe epilayers by atmospheric pressure MOVPE

Tokuo Yodo, Kazuhiro Ueda, Kenji Morio, Ken Yamashita, Shuhei Tanaka

Journal:

Journal of Crystal Growth

Année:

1991

Langue:

english

Fichier:

PDF, 280 KB

english, 1991

17

ECR-assisted MBE growth of In1−xGaxN heteroepitaxial films on Si

Tokuo Yodo, Yasunari Kitayama, Kazunari Miyaki, Hiroaki Yona, Yoshiyuki Harada

Journal:

Superlattices and Microstructures

Année:

2004

Langue:

english

Fichier:

PDF, 2.81 MB

english, 2004

18

Functional surface on periodical nanostructure self-organized by laser scanning at speed of 300 m/min

Satoru Kaneko, Takeshi Ito, Chihiro Kato, Satomi Tanaka, Yosuke Ono, Tokuo Yodo, Hiroyasu Nakata, Akira Matsuno, Takashi Nire, Akifumi Matsuda, Mamoru Yoshimoto

Journal:

Optics and Lasers in Engineering

Année:

2013

Langue:

english

Fichier:

PDF, 932 KB

english, 2013

19

Strong band edge luminescence from InN films grown on Si substrates by electron cyclotron resonance-assisted molecular beam epitaxy

Yodo, Tokuo, Yona, Hiroaki, Ando, Hironori, Nosei, Daiki, Harada, Yoshiyuki

Journal:

Applied Physics Letters

Année:

2002

Langue:

english

Fichier:

PDF, 303 KB

english, 2002

20

Growth and Characterization of GaAs/GaSe/Si Heterostructures

Palmer, Joyce E., Saitoh, Tohru, Yodo, Tokuo, Tamura, Masao

Journal:

Japanese Journal of Applied Physics

Année:

1993

Langue:

english

Fichier:

PDF, 303 KB

english, 1993

21

High-quality epitaxial growth of ZnSe on (100) ZnSe by atmospheric pressure metalorganic vapor phase epitaxy

Yodo, Tokuo, Koyama, Tadashi, Yamashita, Ken

Journal:

Journal of Applied Physics

Année:

1988

Langue:

english

Fichier:

PDF, 737 KB

english, 1988

22

Buffer-enhanced room-temperature growth and characterization of epitaxial ZnO thin films

Sasaki, Atsushi, Hara, Wakana, Matsuda, Akifumi, Tateda, Norihiro, Otaka, Sei, Akiba, Shusaku, Saito, Keisuke, Yodo, Tokuo, Yoshimoto, Mamoru

Journal:

Applied Physics Letters

Année:

2005

Langue:

english

Fichier:

PDF, 289 KB

english, 2005

23

Na+ ion implanted ZnSe epitaxial layers grown by atmospheric pressure metalorganic vapor phase epitaxy

Yodo, Tokuo, Yamashita, Ken

Journal:

Applied Physics Letters

Année:

1989

Langue:

english

Fichier:

PDF, 471 KB

english, 1989

24

Li-doped ZnSe epitaxial layers by ion implantation

Yodo, Tokuo, Yamashita, Ken

Journal:

Applied Physics Letters

Année:

1988

Langue:

english

Fichier:

PDF, 513 KB

english, 1988

25

Epitaxial growth of ZnS grown at low temperatures by atmospheric pressure metalorganic vapor phase epitaxy

Yodo, Tokuo, Ueda, Kazuhiro, Morio, Kenji, Yamashita, Ken, Tanaka, Shuhei

Journal:

Journal of Applied Physics

Année:

1990

Langue:

english

Fichier:

PDF, 1012 KB

english, 1990

26

Growth of CdS by atmospheric pressure metalorganic vapor-phase epitaxy at low temperature

Yodo, Tokuo, Tanaka, Shuhei

Journal:

Journal of Applied Physics

Année:

1992

Langue:

english

Fichier:

PDF, 1.38 MB

english, 1992

27

Photoluminescence study of Li- and Na-implanted ZnSe epitaxial layers grown by atmospheric pressure metalorganic vapor-phase epitaxy

Yodo, Tokuo, Ueda, Kazuhiro, Morio, Kenji, Yamashita, Ken, Tanaka, Shuhei

Journal:

Journal of Applied Physics

Année:

1990

Langue:

english

Fichier:

PDF, 1.08 MB

english, 1990

28

Effects of High-Temperature Annealing on the Structural and Crystalline Qualities of GaAs Heteroepitaxial Layers Grown on Si Substrates Using Two-Step and Direct Methods by Molecular-Beam Epitaxy

Yodo, Tokuo, Tamura, Masao

Journal:

Japanese Journal of Applied Physics

Année:

1995

Fichier:

PDF, 1.69 MB

1995

29

In Situ Observations of GaAs Initial Growth on Si Substrates Studied Using an Ultrahigh-Vacuum Transmission-Electron Microscope/Molecular-Beam Epitaxy System

Yodo, Tokuo, Tamura, Masao, Tomita, Masahiro, MasahiroWazawa,

Journal:

Japanese Journal of Applied Physics

Année:

1995

Fichier:

PDF, 810 KB

1995

30

Characterization of GaAs Films Grown on Vicinal Si(110) Substrates by Molecular-Beam Epitaxy

Journal:

Japanese Journal of Applied Physics

Année:

1995

Fichier:

PDF, 1.63 MB

1995

31

Initial Growth of GaAs on Vicinal Si(111) Substrates by Molecular-Beam Epitaxy

Journal:

Japanese Journal of Applied Physics

Année:

1995

Fichier:

PDF, 523 KB

1995

32

Anisotropic Strain Estimated from Lattice Parameters Measured by Bond Method Using X-Ray Diffraction, in Molecular Beam Epitaxy-grown GaAs/Si(001)

Journal:

Japanese Journal of Applied Physics

Année:

1998

Fichier:

PDF, 998 KB

1998

33

Room-temperature growth of ultrasmooth AlN epitaxial thin films on sapphire with NiO buffer layer

Sasaki, Atsushi, Liu, Jin, Hara, Wakana, Akiba, Shusaku, Saito, Keisuke, Yodo, Tokuo, Yoshimoto, Mamoru

Journal:

Journal of Materials Research

Année:

2004

Langue:

english

Fichier:

PDF, 1008 KB

english, 2004

34

Damage Due to Nitrogen Molecular Ions of GaN Heteroepitaxial Layers Grown on Si(001) Substrates by Molecular Beam Epitaxy Assisted by Electron Cyclotron Resonance

Yodo, Tokuo, Tsuchiya, Hironori, Ando, Hironori, Harada, Yoshinobu

Journal:

Japanese Journal of Applied Physics

Année:

2000

Langue:

english

Fichier:

PDF, 643 KB

english, 2000

35

Epitaxial Growth of High Quality ZnSe on GaAs Substrate by Atmospheric Pressure MOVPE Using Dimethylzinc and Hydrogen Selenide

Yodo, Tokuo, Oka, Hidetoshi, Koyama, Tadashi, Yamashita, Ken

Journal:

Japanese Journal of Applied Physics

Année:

1987

Langue:

english

Fichier:

PDF, 216 KB

english, 1987

36

Photoluminescence from Electron-Hole Plasma in MOVPE Grown ZnSe

Nakata, Hiroyasu, Yodo, Tokuo, Yamashita, Ken

Journal:

Japanese Journal of Applied Physics

Année:

1990

Langue:

english

Fichier:

PDF, 213 KB

english, 1990

37

Facile preparation of YAG:Ce nanoparticles by laser irradiation in water and their optical properties

Tsuruoka, Noriyuki, Sasagawa, Takao, Yodo, Tokuo, Yoshimoto, Mamoru, Odawara, Osamu, Wada, Hiroyuki

Journal:

Année:

2016

Langue:

english

Fichier:

PDF, 3.16 MB

english, 2016

38

[AIP 4th International workshop on: Slow−positron beam techniques for solids and surfaces - Ontario (Canada) (3−6 Jul 1990)] AIP Conference Proceedings - Defects in MOVPE-grown ZnSe films on GaAs studied using monoenergetic positrons

Yang-Koo Cho,, Wei, Long, Dosho, Chisei, Tanigawa, Shoichiro, Yodo, Tokuo, Yamashita, Ken

Année:

1991

Langue:

english

Fichier:

PDF, 841 KB

english, 1991